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Deep Electron Trapping Centers in Si-Doped InAlAs Grown by Molecular Beam Epitaxy

✍ Scribed by Nakashima, K. ;Nojima, S. ;Kawamura, Y. ;Asahi, H.

Publisher: John Wiley and Sons
Year: 1987
Tongue: English
Weight: 379 KB
Volume: 103
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211030222

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