Silicon nitride films of various compositions have been deposited on silicon substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique from mixtures of Ar, N and SiH as precursors. Film 2 4 composition and refractive index as a function of deposition p
Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate
β Scribed by L K Bera; S K Ray; H D Banerjee; C K Maiti
- Book ID
- 110659506
- Publisher
- Springer-Verlag
- Year
- 1998
- Tongue
- English
- Weight
- 275 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0250-4707
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Deposition processes and film properties of plasma-enhanced chemical vapour deposition (PECVD) films derived from fluoroalkylsilanes are described. The fluorinated silicon dioxide (FSG) films have lower dielectric constants (3.3-3.7) than non-fluorinated silicon dioxide films (>4). With similar diel
High-quality silicon dioxide films have been deposited in the temperature range 150-425 Β°C by electron-cyclotron resonance chemical-vapour deposition (ECR-CVD) using an oxygen plasma with silane introduced downstream. The interface state densities of 10 nm thick films measured by the high-low freque