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Electron-beam-induced current study of grain boundaries in multicrystalline silicon

โœ Scribed by Chen, J.; Sekiguchi, T.; Yang, D.; Yin, F.; Kido, K.; Tsurekawa, S.


Book ID
120675060
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
933 KB
Volume
96
Category
Article
ISSN
0021-8979

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Electron-beam-induced current study of h
โœ Jun Chen; Deren Yang; Zhenqiang Xi; Takashi Sekiguchi ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 394 KB

The impacts of grain boundary (GB) character and impurity contamination level on the hydrogen passivation of GBs in multicrystalline silicon (mc-Si) were studied by means of an electron-beam-induced current (EBIC) technique. In mc-Si with a low contamination of Fe, the 300 K EBIC contrast of all kin