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Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial film

✍ Scribed by Bin Chen; Jun Chen; Takashi Sekiguchi; Akimasa Kinoshita; Hirofumi Matsuhata; Hirotaka Yamaguchi; Ichirou Nagai; Hajime Okumura

No coin nor oath required. For personal study only.

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