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Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior

✍ Scribed by Kveder, V.; Kittler, M.; Schröter, W.


Book ID
111694741
Publisher
The American Physical Society
Year
2001
Tongue
English
Weight
145 KB
Volume
63
Category
Article
ISSN
1098-0121

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