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An electron-beam-induced current study of dislocations in GaAs

✍ Scribed by S.A. Galloway; P.R. Wilshaw; A. Konkol

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
782 KB
Volume
24
Category
Article
ISSN
0921-5107

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The paper reports measurements of electron-beam-induced current contrast c vs. temperature T and beam current Ib for two misfit dislocations in a p-type Si/SiGe sample. It is demonstrated that the different behaviour observed can be explained on the basis of the Shockley-Read-Hall recombination theo