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Electrolytic Removal of P-Type GaAs Substrates from Thin, N-Type Semiconductor Layers

โœ Scribed by Nuese, C. J.; Gannon, J. J.

Book ID
126767645
Publisher
The Electrochemical Society
Year
1970
Tongue
English
Weight
744 KB
Volume
117
Category
Article
ISSN
0013-4651

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High p-type doping level of MgZnCdSe on
High p-type doping level of MgZnCdSe on InP substrates by inserting ZnTe thin layers
โœ Takumi Saitoh; Ichirou Nomura; Kan Sueoka; Akihiko Kikuchi; Katsumi Kishino ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 156 KB

## Abstract A novel pโ€type doping method for MgZnCdSe on InP substrates was proposed. In this method, highly pโ€typeโ€doped thin layers, such as Nโ€doped ZnTe, are inserted at proper intervals into MgZnCdSe layers. The inserted thin layer emits holes and the pโ€type coduction was achieved. ZnCdSe/ZnTe