High p-type doping level of MgZnCdSe on InP substrates by inserting ZnTe thin layers
✍ Scribed by Takumi Saitoh; Ichirou Nomura; Kan Sueoka; Akihiko Kikuchi; Katsumi Kishino
- Book ID
- 104557962
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 156 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1862-6351
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✦ Synopsis
Abstract
A novel p‐type doping method for MgZnCdSe on InP substrates was proposed. In this method, highly p‐type‐doped thin layers, such as N‐doped ZnTe, are inserted at proper intervals into MgZnCdSe layers. The inserted thin layer emits holes and the p‐type coduction was achieved. ZnCdSe/ZnTe superlattices (SLs), where thin p‐type‐doped ZnTe layers were periodically inserted, were grown on InP substrates by molecuar beam epitaxy. When the ratio of ZnTe layer thickness to one insertion period was 0.17, the net acceptor cocentration (N~A~‐N~D~) value reached 8.0 × 10^17^ cm^–3^. This value was more than one order of magnitude greater than that of a simple N‐doped ZnCdSe layer (3.5 × 10^16^ cm^–3^). To obtain wide bandgap p‐type materials, MgSe/ZnCdSe/ZnTe SLs were fabricated. N~A~‐N~D~ values from 4.7 × 10^17^ to 8.0 × 10^17^ cm^–3^ were observed for samples with bandgap energies from 2.33 to 2.04 eV. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)