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Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1-xGex/Si substrate

✍ Scribed by Tanoto, H.; Yoon, S. F.; Lew, K. L.; Loke, W. K.; Dohrman, C.; Fitzgerald, E. A.; Tang, L. J.

Book ID: 118150717
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 672 KB
Volume: 95
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3243984

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