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Electro-optic properties of oxide ferroelectrics grown on GaN/sapphire

✍ Scribed by Wang, F.; Fuflyigin, V.; Osinsky, A.

Book ID
121329045
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
215 KB
Volume
88
Category
Article
ISSN
0021-8979

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## Abstract A detailed photoluminescence (PL), time‐resolved photoluminescence (TRPL), and photoreflectance (PR) analysis of AlGaN/GaN heterostructures grown on different substrates: sapphire and silicon carbide (SiC) is presented in this paper. The properties of high electron mobility transistors