Electro-chemical mechanical polishing of silicon carbide
β Scribed by Canhua Li; Ishwara B. Bhat; Rongjun Wang; Joseph Seiler
- Book ID
- 107453250
- Publisher
- Springer US
- Year
- 2004
- Tongue
- English
- Weight
- 678 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0361-5235
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π SIMILAR VOLUMES
The unusual concentration effect in copper chemical mechanical polishing (CMP) is verified experimentally and operation-relevant models are derived. First, the well-known Preston equation is modified by taking the concentration effects into account. Next, a linear model is proposed to describe dishi
Sub micron silver lines are patterned by applying chemical mechanical polishing (CMP). Dry etched SiO 2 trenches are filled with Ag by sputtering before removing surplus Ag by several CMP methods. Techniques using a slurry which focus on mechanical polishing have a problem in achieving planar remova