Chemical mechanical polishing of silver damascene structures
✍ Scribed by M Hauder; J Gstöttner; L Gao; D Schmitt-Landsiedel
- Book ID
- 104305731
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 487 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Sub micron silver lines are patterned by applying chemical mechanical polishing (CMP). Dry etched SiO 2 trenches are filled with Ag by sputtering before removing surplus Ag by several CMP methods. Techniques using a slurry which focus on mechanical polishing have a problem in achieving planar removal of the metal. But with mainly chemical polishing a homogenous removal with proper embedded lines is possible. Thermally robust and smooth Ag metallization lines are the result of such a process.
📜 SIMILAR VOLUMES
The unusual concentration effect in copper chemical mechanical polishing (CMP) is verified experimentally and operation-relevant models are derived. First, the well-known Preston equation is modified by taking the concentration effects into account. Next, a linear model is proposed to describe dishi