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Robust operation of copper chemical mechanical polishing

✍ Scribed by Yi-Chung Kao; Cheng-Ching Yu; Shih-Haur Shen

Book ID
104305721
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
843 KB
Volume
65
Category
Article
ISSN
0167-9317

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✦ Synopsis

The unusual concentration effect in copper chemical mechanical polishing (CMP) is verified experimentally and operation-relevant models are derived. First, the well-known Preston equation is modified by taking the concentration effects into account. Next, a linear model is proposed to describe dishing as functions of and typical operation variables. Combining both models, we are able to locate feasible operation region without constraint violation. Finally, the robust operation procedure is incorporated into a realistic CMP operation strategy: soft landing. A systematic procedure is proposed to ensure robust operation for copper CMP.

πŸ“œ SIMILAR VOLUMES

Chemical-mechanical polishing of copper
Chemical-mechanical polishing of copper for interconnect formation
✍ Z. Stavreva; D. Zeidler; M. PlΓΆtner; G. Grasshoff; K. Drescher πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 569 KB

A systematic study of Cu chemical-mechanical polishing (CMP) in terms of process parameters influence, planarization ability of the process and pattern sensitivity of the polish rate was performed. We examined the effects of Cu dishing and SiO z thinning and the reasons for them. Both were found to