Effects of electric potential on chemical-mechanical polishing of copper
β Scribed by G. Helen Xu; Hong Liang
- Book ID
- 107452813
- Publisher
- Springer US
- Year
- 2002
- Tongue
- English
- Weight
- 344 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0361-5235
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π SIMILAR VOLUMES
The unusual concentration effect in copper chemical mechanical polishing (CMP) is verified experimentally and operation-relevant models are derived. First, the well-known Preston equation is modified by taking the concentration effects into account. Next, a linear model is proposed to describe dishi
A systematic study of Cu chemical-mechanical polishing (CMP) in terms of process parameters influence, planarization ability of the process and pattern sensitivity of the polish rate was performed. We examined the effects of Cu dishing and SiO z thinning and the reasons for them. Both were found to