Contact resistivities for sputtered W/W
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Zhang Bangwei; W.A. Jesser; F.D. Rosi
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Article
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1992
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Elsevier Science
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English
⚖ 972 KB
Using a two-point probe the contact resistivities were studied at 300 K and the effect of heat treatment on them for W/W and W/Ta layers deposited on Si-Ge-GaP alloys. Up to 1000 K for 10 h the contact resistivity for the W/W deposited layers did not change from the value at 300 K. However, the W/Ta