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Electrical properties of the InP/InGaAspnpheterostructure-emitter bipolar transistor

✍ Scribed by J. H. Tsai; W. Ch. Liu; D. F. Guo; Y. Ch. Kang; Sh. Y. Chiu; W. Sh. Lour

Book ID
111443994
Publisher
Springer
Year
2008
Tongue
English
Weight
202 KB
Volume
42
Category
Article
ISSN
1063-7826

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An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a welldesigned emitter improve the characte