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DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

โœ Scribed by Chun-Yuan Chen; Shiou-Ying Cheng; Wen-Hui Chiou; Hung-Ming Chuang; Rong-Chau Liu; Chih-Hung Yen; Jing-Yuh Chen; Chin-Chuan Cheng; Wen-Chau Liu

Book ID
118698603
Publisher
IEEE
Year
2003
Tongue
English
Weight
508 KB
Volume
50
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES

Investigation of InP/InGaAs superlattice
Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs)
โœ Wei-Chou Wang; Hsi-Jen Pan; Kun-Wei Lin; Kuo-Hui Yu; Cheng-Zu Wu; Lih-Wen Laih; ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 800 KB

An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a welldesigned emitter improve the characte