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Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors

โœ Scribed by Tsai, Jung-Hui; Huang, Chia-Hong; Ma, Yung-Chun; Wu, You-Ren

Book ID
120345239
Publisher
Springer
Year
2012
Tongue
English
Weight
201 KB
Volume
46
Category
Article
ISSN
1063-7826

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Investigation of InP/InGaAs superlattice
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โœ Wei-Chou Wang; Hsi-Jen Pan; Kun-Wei Lin; Kuo-Hui Yu; Cheng-Zu Wu; Lih-Wen Laih; ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 800 KB

An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a welldesigned emitter improve the characte