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Electrical properties of silicon schottky diodes containing metal films of various compositions

โœ Scribed by I. G. Pashaev

Book ID
120808767
Publisher
Springer
Year
2013
Tongue
English
Weight
168 KB
Volume
47
Category
Article
ISSN
1063-7826

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โœ L. Magafas; N. Georgoulas; A. Thanailakis ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 515 KB

Electrical properties of Schottky diodes on rf sputtered a-SiC:H thin films for different metals (Mg,In,Al,Pd) were investigated. The M(=Mg,In,A1,Pd)/a-SiC:H Schottky diodes were found to exhibit very good rectification properties, with a turn-on voltage varying from 0-4 to 0-8V, depending on the to