Electrical and structural properties of refractory metal Mo/poly(3-methylthiophene) Schottky barrier diodes
✍ Scribed by S Tagmouti; A Oueriagli; A Outzourhit; M Khaidar; El.L Ameziane; A Yassar; H.K Youssoufi; F Garnier
- Book ID
- 117540700
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 267 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0379-6779
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## Abstract The electrical and structural properties of molybdenum (Mo) Schottky contact to n‐type GaN (4.07 × 10^18^ cm^–3^) have been investigated before and after annealing at 600 °C. Measurements show that the Schottky barrier height of the as‐deposited sample was 0.81 eV (__I__–__V__) and 1.02
## Abstract Thermal annealing effects on the electrical and structural properties of Ni/Mo Schottky contacts on n‐type GaN have been investigated by current–voltage (__I–V__), capacitance–voltage (__C–V__), Secondary ion mass spectrometer (SIMS), and X‐ray diffraction (XRD) techniques. The extracte