Electrical properties of Al2O3 film deposited at low temperatures
โ Scribed by W.H. Ha; M.H. Choo; S. Im
- Book ID
- 117145731
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 286 KB
- Volume
- 303
- Category
- Article
- ISSN
- 0022-3093
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## Abstract In this paper the breakdown field strength and resistivity of sputterโdeposited Al~2~O~3~, SiO~2~ and Si~3~N~4~ layers are investigated in the temperature range between room temperature and 400 ยฐC. All the investigated layers showed excellent insulation properties, even at elevated samp
Yttrium oxide thin film deposition by atomic layer epitaxy (ALE) was studied at 200ยฑ425 C using Y(thd) 3 , Y(thd) 3 (bipyridyl), or Y(thd) 3 (1,10-phenanthroline) (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) as an yttrium precursor, and ozone as an oxygen source. All yttrium precursors were analyzed