Improvement of the electrical properties
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Chevallier, J. ;Saguy, C. ;BarbΓ©, M. ;Jomard, F. ;Ballutaud, D. ;Kociniewski, T.
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Article
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2005
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John Wiley and Sons
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English
β 225 KB
## Abstract We have followed the evolution of the electrical and infrared absorption properties of two phosphorusβdoped epitaxial layers under a series of isochronal annealings between 800 Β°C and 1400 Β°C. In the asβgrown state, one sample is weakly compensated (__N~a~__/__N~d~__= 0.15) while the ot