Improvement of the electrical properties of compensated phosphorus-doped diamond by high temperature annealing

✍ Scribed by Chevallier, J. ;Saguy, C. ;Barbé, M. ;Jomard, F. ;Ballutaud, D. ;Kociniewski, T. ;Philosoph, B. ;Fizgeer, B. ;Koizumi, S.

• Book ID: 105363528
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 225 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200561926

✦ Synopsis

Abstract

We have followed the evolution of the electrical and infrared absorption properties of two phosphorus‐doped epitaxial layers under a series of isochronal annealings between 800 °C and 1400 °C. In the as‐grown state, one sample is weakly compensated (N~a~/N~d~= 0.15) while the other one is highly compensated (N~a~/N~d~ = 0.73). Under thermal annealing, both the electrical and infrared properties of the weakly compensated remain unchanged. On the contrary, the highly compensated sample becomes weakly compensated (N~a~/N~d~ = 0.15) after annealing at 1000 °C, 30 min while the neutral phosphorus concentration remains constant. This result is explained in terms of a migration of negatively charged acceptors followed by trapping on P^+^ donors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)