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Improvement of the Electrical Properties of β-FeSi 2 Films on Si (001) by High-Temperature Annealing

✍ Scribed by Takakura, Ken-ichiro; Suemasu, Takashi; Hiroi, Noriyoshi; Hasegawa, Fumio

Book ID
127333541
Publisher
Institute of Pure and Applied Physics
Year
2000
Tongue
English
Weight
241 KB
Volume
39
Category
Article
ISSN
0021-4922

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## Abstract We have followed the evolution of the electrical and infrared absorption properties of two phosphorus‐doped epitaxial layers under a series of isochronal annealings between 800 °C and 1400 °C. In the as‐grown state, one sample is weakly compensated (__N~a~__/__N~d~__= 0.15) while the ot