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High activity of B during solid-phase epitaxy in a pre-amorphized layer formed by Ge ion implantation and deactivation during a subsequent thermal process

✍ Scribed by Suzuki, K.; Tashiro, H.; Narita, K.; Kataoka, Y.


Book ID
114617412
Publisher
IEEE
Year
2004
Tongue
English
Weight
254 KB
Volume
51
Category
Article
ISSN
0018-9383

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