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Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

✍ Scribed by Polyakov, A.Y.; Smirnov, N.B.; Yakimov, E.B.; Usikov, A.S.; Helava, H.; Shcherbachev, K.D.; Govorkov, A.V.; Makarov, Yu N.; Lee, In-Hwan

Book ID: 127277525
Publisher: Elsevier Science
Year: 2014
Tongue: English
Weight: 894 KB
Volume: 617
Category: Article
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2014.07.208

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