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Electrical characterization of oxide in MOS devices using low energy electron beam filling of traps

✍ Scribed by P. Charpenel; P. Girard; F.M. Roche

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 273 KB
Volume: 24
Category: Article
ISSN: 0026-2692
DOI: 10.1016/0026-2692(93)90041-c

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