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Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy

✍ Scribed by Chung, H. M.; Chuang, W. C.; Pan, Y. C.; Tsai, C. C.; Lee, M. C.; Chen, W. H.; Chen, W. K.; Chiang, C. I.; Lin, C. H.; Chang, H.


Book ID
121258941
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
372 KB
Volume
76
Category
Article
ISSN
0003-6951

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