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Zinc doping in InP grown by atmospheric pressure metalorganic vapor phase epitaxy

โœ Scribed by A. Molassioti; F. Scholz; Y. Gao


Book ID
107790546
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
404 KB
Volume
102
Category
Article
ISSN
0022-0248

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GaInAs/InP quantum wires grown by metalo
โœ M. Geiger; F. Adler; U.A. Griesinger; H. Schweizer; F. Scholz ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 414 KB

A single nominally lattice matched GalnAs quantum well (QW)/quantum wire (QWR) structure was grown by metalorganic vapor phase epitaxy (MOVPE) in Vgrooved lnP substrates. Different SiO2 etch masks with opening widths from 2/tin down to 200 nm (for application as second order DFB grating) were define