Transport properties of double-gate SiO2
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Prunnila, Mika ;Ahopelto, Jouni ;Sakaki, Hiroyuki
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Article
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2005
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John Wiley and Sons
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English
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## Abstract We report on fabrication and low temperature transport properties of doubleβgate SiO~2~βSiβSiO~2~ quantum well with a 16.5 nm thick Si layer. The device is fabricated on a siliconβonβinsulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport