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Electrical characteristics of SiO2/crystalline Si quantum dots/SiO2 double-barrier diode

✍ Scribed by Xiaofeng Gu; Hua Qin; Hai Lu; Kunji Chen; Xinfan Huang


Book ID
117148991
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
307 KB
Volume
227-230
Category
Article
ISSN
0022-3093

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Transport properties of double-gate SiO2
✍ Prunnila, Mika ;Ahopelto, Jouni ;Sakaki, Hiroyuki πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 572 KB

## Abstract We report on fabrication and low temperature transport properties of double‐gate SiO~2~–Si–SiO~2~ quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport