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Electrical characterisation of hole traps in n-type GaN

✍ Scribed by Auret, F. D. ;Meyer, W. E. ;Wu, L. ;Hayes, M. ;Legodi, M. J. ;Beaumont, B. ;Gibart, P.


Book ID
105362705
Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
114 KB
Volume
201
Category
Article
ISSN
0031-8965

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Electrical properties of n-Type GaN
✍ Doz. Dr. sc. Hans Neumann πŸ“‚ Article πŸ“… 1977 πŸ› John Wiley and Sons 🌐 English βš– 292 KB

## Abstract The electron mobility in GaN is calculated as function of the carrier and impurity concentrations. From a comparison of the theoretically calculated mobilities with electrical parameters measured experimentally it follows that native donor and acceptor concentrations of the same order o