𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical properties of n-Type GaN

✍ Scribed by Doz. Dr. sc. Hans Neumann

Publisher
John Wiley and Sons
Year
1977
Tongue
English
Weight
292 KB
Volume
12
Category
Article
ISSN
0232-1300

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

The electron mobility in GaN is calculated as function of the carrier and impurity concentrations. From a comparison of the theoretically calculated mobilities with electrical parameters measured experimentally it follows that native donor and acceptor concentrations of the same order of magnitude are present in undoped GaN.

πŸ“œ SIMILAR VOLUMES

Electrical and Photoelectronic Propertie
Electrical and Photoelectronic Properties of Hexagonal GaN
✍ Seitz, R. ;Gaspar, C. ;Monteiro, T. ;Pereira, L. ;Pereira, E. ;SchΓΆn, O. ;Heuken πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 140 KB πŸ‘ 2 views

Photoconductivity of a non-intentionally doped GaN layer is observed for above band gap excitation. No below band gap excitation causes photoconductivity, but photoconductivity is optical quenched at energies of 1.28, 1.41, 1.53 and %2eV. The dark current and the yellow photoluminescence band show t