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Electrical and Photoelectronic Properties of Hexagonal GaN

✍ Scribed by Seitz, R. ;Gaspar, C. ;Monteiro, T. ;Pereira, L. ;Pereira, E. ;Schön, O. ;Heuken, M.

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
140 KB
Volume
176
Category
Article
ISSN
0031-8965

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✦ Synopsis

Photoconductivity of a non-intentionally doped GaN layer is observed for above band gap excitation. No below band gap excitation causes photoconductivity, but photoconductivity is optical quenched at energies of 1.28, 1.41, 1.53 and %2eV. The dark current and the yellow photoluminescence band show the same activation energy (42 meV) supporting therefore the model that relates the yellow band to a shallow donor to a deep acceptor transition. The photocurrent is thermally quenched with an activation energy of 77 meV.

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First, spectroscopic ellipsometry (SE) is carried out at 300 K together with reflectivity measurements versus temperature from 4 to 300 K, in order to determine the temperature dependence of the refractive index of h-GaN films in the transparent region (350 to 600 nm). The SE measurements are carrie