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Electrical and structural characterization of Fe implanted GaInP

✍ Scribed by B. Fraboni; T. Cesca; A. Gasparotto; G. Mattei; F. Boscherini; G. Impellizzeri; F. Priolo; R. Jakomin; M. Longo; L. Tarricone

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
163 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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Incorporation of active Fe impurities in
Incorporation of active Fe impurities in GaInP by high temperature ion implantation
✍ T. Cesca; A. Gasparotto; A. Verna; B. Fraboni; G. Impellizzeri; F. Priolo; L. Ta πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 148 KB

Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 Β°C and annealed at 450 or 600 Β°C. The role of implantation temperature and fluence in determining the crystal damage, and the damage recovery by annealing are investigated by RBS-channeling measurements. T