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Electrical and Physical Properties of Er-Doped HfO[sub 2] High-k Dielectrics Prepared by Atomic Layer Deposition

✍ Scribed by Wu, L.; Yu, H. Y.; Pey, K. L.; Pan, J. S.; Tuominen, M.; Tois, Eva; Lee, D. Y.; Hsu, K. Y.; Huang, K. T.; Tao, H. J.; Mii, Y. J.

Book ID: 125517286
Publisher: The Electrochemical Society
Year: 2010
Tongue: English
Weight: 196 KB
Volume: 13
Category: Article
ISSN: 1099-0062
DOI: 10.1149/1.3266877

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