Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt
β¦ LIBER β¦
Electrical and optical characterization of crystalline silicon/porous silicon heterojunctions
β Scribed by C. Palsule; S. Liu; S. Gangopadhyay; M. Holtz; D. Lamp; M. Kristiansen
- Book ID
- 108472549
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 426 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0927-0248
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## Abstract To study recombination at the amorphous/crystalline Si (aβSi:H/cβSi) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechan