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Optical and electrical characterization of the band structure of polyaniline nanofilms and polyaniline/silicon heterojunctions

✍ Scribed by E. A. de Vasconcelos; E. F. daSilva Jr.; J. M. G. Laranjeira; W. M. de Azevedo; I. M. Pepe; A. Ferreira da Silva


Book ID
104557253
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
109 KB
Volume
2
Category
Article
ISSN
1862-6351

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Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt