Electric characterization of GaAs deposited on porous silicon by electrodeposition technique
β Scribed by M. Lajnef; R. Chtourou; H. Ezzaouia
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 300 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt
## 2. Experimental procedures ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The