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Efficient silicon light-emitting diodes

✍ Scribed by Green, Martin A.; Zhao, Jianhua; Wang, Aihua; Reece, Peter J.; Gal, Michael

Book ID
109775694
Publisher
Nature Publishing Group
Year
2001
Tongue
English
Weight
264 KB
Volume
412
Category
Article
ISSN
0028-0836

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Experiments and theoretical modeling are presented on the origin of efficient electroluminescence from boron implanted Si-LEDs. At low lattice temperatures two bound exciton traps created by high dose boron implantation were observed in the most efficient LEDs with external power efficiency above 0.