Efficient silicon light emitting diodes by boron implantation: the mechanism

✍ Scribed by J.M. Sun; T. Dekorsy; W. Skorupa; A.Mücklich; B. Schmidt; M. Helm

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 305 KB
• Volume: 27
• Category: Article
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2004.08.059

✦ Synopsis

Experiments and theoretical modeling are presented on the origin of efficient electroluminescence from boron implanted Si-LEDs. At low lattice temperatures two bound exciton traps created by high dose boron implantation were observed in the most efficient LEDs with external power efficiency above 0.12%. The temperature dependence of the correlation between the EL intensity from free and bound excitons is analyzed by a rate equation model. This analysis reveals that the bound excitons have a unique characteristic of a low recombination rate. The enhancement of EL from free electron-hole pairs with increasing temperature is due to the thermal activation of carriers from bound exciton traps.