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Efficient silicon light emitting diodes made by dislocation engineering

✍ Scribed by M.A. Lourenço; M.S.A. Siddiqui; R.M. Gwilliam; G. Shao; K.P. Homewood

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
134 KB
Volume
16
Category
Article
ISSN
1386-9477

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Experiments and theoretical modeling are presented on the origin of efficient electroluminescence from boron implanted Si-LEDs. At low lattice temperatures two bound exciton traps created by high dose boron implantation were observed in the most efficient LEDs with external power efficiency above 0.