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Highly efficient silicon light emitting diodes produced by doping engineering

✍ Scribed by Jiaming Sun; M. Helm; W. Skorupa; B. Schmidt; A. Mücklich

Book ID
113099555
Publisher
SP Higher Education Press
Year
2012
Tongue
English
Weight
241 KB
Volume
5
Category
Article
ISSN
2095-2759

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✍ J.M. Sun; T. Dekorsy; W. Skorupa; A.Mücklich; B. Schmidt; M. Helm 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 305 KB

Experiments and theoretical modeling are presented on the origin of efficient electroluminescence from boron implanted Si-LEDs. At low lattice temperatures two bound exciton traps created by high dose boron implantation were observed in the most efficient LEDs with external power efficiency above 0.