When a Ta layer is deposited at the Si-Ti interface a new phase has been detected, i.e., the TiSi C40. The 2 C40-C54 transformation kinetics and the film morphology are consistent with an increase of the nucleation density with respect to the C49-C54 transition. The activation energies for the nucle
โฆ LIBER โฆ
Effects of thermal processes after silicidation on the performance of TiSi2/polysilicon gate device
โ Scribed by Se-Aug Jang; Tae-Kyun Kim; In-Seok Yeo; Hyeon-Soo Kim; Sahng-Kyoo Lee
- Book ID
- 114537944
- Publisher
- IEEE
- Year
- 1999
- Tongue
- English
- Weight
- 98 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0018-9383
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