High densities of both bulk and interface states were found in CdZnS/ CuInSe2 thin film devices. Deep level transient spectroscopy studies showed that air baking removes minority carrier levels at 39 meV and 78 meV. Light induced capacitance indicated that charging of deep interface states reduced t
โฆ LIBER โฆ
The effect of thermal annealing of Mo film on the CuInSe2 layer texture and device performance
โ Scribed by Tong, Jun; Luo, Hai-Lin; Xu, Zhu-An; Zeng, Hao; Xiao, Xu-Dong; Yang, Chun-Lei
- Book ID
- 123260707
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 899 KB
- Volume
- 119
- Category
- Article
- ISSN
- 0927-0248
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