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Study of the effect of thermal annealing on highkhafnium oxide thin film structure and electrical properties of MOS and MIM devices

✍ Scribed by A. Srivastava; R. K. Nahar; C. K. Sarkar

Book ID
106398667
Publisher
Springer US
Year
2010
Tongue
English
Weight
762 KB
Volume
22
Category
Article
ISSN
0957-4522

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