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Effects of the substrate misorientation on the excitonic transition properties in GaAs/AlAs superlattices

✍ Scribed by Y. Chen; J. Massies; G. Neu; C. Deparis; B. Gil

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
412 KB
Volume
81
Category
Article
ISSN
0038-1098

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The temperature dependence of the recombination dynamics of excitons is investigated by time-resolved photoluminescence spectroscopy in (GaAs) n /(AlAs) n superlattices, where n denotes the layer thickness in monolayers, for different types of band structures. In directgap superlattices with a layer