Effect of the dielectric function and pressure on the binding energies of excitons in GaAs and GaAs/Ga1−xAlxAs superlattices
✍ Scribed by B. Sukumar; K. Navaneethakrishnan
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 258 KB
- Volume
- 76
- Category
- Article
- ISSN
- 0038-1098
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The binding energies of shallow hydrogenic donor impurities in GaAs±(Ga,Al)As quantum boxes are calculated as a function of the size of the structure and as a function of the intensity of an applied electric field. The calculations are performed within the effective-mass approximation and using a va
The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence