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Effects of substrate doping on the properties of porous silicon carbide layers

✍ Scribed by V. B. Shuman; V. V. Ratnikov; N. S. Savkina


Book ID
110131400
Publisher
SP MAIK Nauka/Interperiodica
Year
2002
Tongue
English
Weight
31 KB
Volume
28
Category
Article
ISSN
1063-7850

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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi