## Abstract Excitation densityβdependent microphotoluminescence measurements were performed on a green light (515βnm) emitting InGaN/GaN multiquantum well sample of low threading dislocation density (5βΓβ10^7^βcm^β2^). For the observed structure we find a different shape of the local internal quant
β¦ LIBER β¦
Effects of Strains and Defects on the Internal Quantum Efficiency of InGaN/GaN Nanorod Light Emitting Diodes
β Scribed by Chun-Hsiang Chang; Liang-Yi Chen; Li-Chuan Huang; Yu-Ting Wang; Tzu-Chun Lu; Jian Jang Huang
- Book ID
- 114566190
- Publisher
- IEEE
- Year
- 2012
- Tongue
- English
- Weight
- 864 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0018-9197
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