✦ LIBER ✦

The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

✍ Scribed by N. I. Bochkareva; E. A. Zhirnov; A. A. Efremov; Yu. T. Rebane; R. I. Gorbunov; A. V. Klochkov; D. A. Lavrinovich; Yu. G. Shreter

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of Strains and Defects on the In

✍ Chun-Hsiang Chang; Liang-Yi Chen; Li-Chuan Huang; Yu-Ting Wang; Tzu-Chun Lu; Jia 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 864 KB

Interference effects in the electrorefle

✍ L. P. Avakyants; P. Yu. Bokov; A. V. Chervyakov; A. V. Chuyas; A. E. Yunovich; E 📂 Article 📅 2010 🏛 Springer 🌐 English ⚖ 228 KB

Thermal effect on the electroluminescenc

✍ Ya-Fen Wu; Hung-Pin Hsu; Tsung-Yu Liu 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 372 KB

Strain engineering for the solution of e

✍ Son, Jun Ho; Lee, Jong-Lam 📂 Article 📅 2010 🏛 Optical Society of America 🌐 English ⚖ 821 KB

Polarization anisotropy in the electrolu

✍ Gardner, N. F.; Kim, J. C.; Wierer, J. J.; Shen, Y. C.; Krames, M. R. 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 519 KB

Improvement of the droop efficiency in I

✍ Yen-Hsiang Fang; Rong Xuan; Chu-Li Chao 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 650 KB